Nanoscale deposition of solid inks via thermal dip pen nanolithography

P. E. Sheehan, L. J. Whitman, William P. King, Brent A Nelson

Research output: Contribution to journalArticle

128 Citations (Scopus)

Abstract

The nanoscale deposition of solid organic 'ink' was investigated using thermal dip pen nanolithography (tDPN). The deposition occurs only when the cantilver tip is heated above melting temperature of octadecylphosphonic acid (OPA) such that deposited structure does not spread significantly while cooling, which was revealed by postdeposition analysis. The single lines were found to be written with a width of 100 nm. The results show that tDPN allows local control of deposition and deposition of materials typically immobile at room temperature.

Original languageEnglish (US)
Pages (from-to)1589-1591
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number9
DOIs
StatePublished - Aug 30 2004
Externally publishedYes

Fingerprint

pens
inks
organic solids
melting
cooling
acids
room temperature
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Nanoscale deposition of solid inks via thermal dip pen nanolithography. / Sheehan, P. E.; Whitman, L. J.; King, William P.; Nelson, Brent A.

In: Applied Physics Letters, Vol. 85, No. 9, 30.08.2004, p. 1589-1591.

Research output: Contribution to journalArticle

Sheehan, P. E. ; Whitman, L. J. ; King, William P. ; Nelson, Brent A. / Nanoscale deposition of solid inks via thermal dip pen nanolithography. In: Applied Physics Letters. 2004 ; Vol. 85, No. 9. pp. 1589-1591.
@article{9ecc5886ceec4c429389356c8b39c748,
title = "Nanoscale deposition of solid inks via thermal dip pen nanolithography",
abstract = "The nanoscale deposition of solid organic 'ink' was investigated using thermal dip pen nanolithography (tDPN). The deposition occurs only when the cantilver tip is heated above melting temperature of octadecylphosphonic acid (OPA) such that deposited structure does not spread significantly while cooling, which was revealed by postdeposition analysis. The single lines were found to be written with a width of 100 nm. The results show that tDPN allows local control of deposition and deposition of materials typically immobile at room temperature.",
author = "Sheehan, {P. E.} and Whitman, {L. J.} and King, {William P.} and Nelson, {Brent A}",
year = "2004",
month = "8",
day = "30",
doi = "10.1063/1.1785860",
language = "English (US)",
volume = "85",
pages = "1589--1591",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "9",

}

TY - JOUR

T1 - Nanoscale deposition of solid inks via thermal dip pen nanolithography

AU - Sheehan, P. E.

AU - Whitman, L. J.

AU - King, William P.

AU - Nelson, Brent A

PY - 2004/8/30

Y1 - 2004/8/30

N2 - The nanoscale deposition of solid organic 'ink' was investigated using thermal dip pen nanolithography (tDPN). The deposition occurs only when the cantilver tip is heated above melting temperature of octadecylphosphonic acid (OPA) such that deposited structure does not spread significantly while cooling, which was revealed by postdeposition analysis. The single lines were found to be written with a width of 100 nm. The results show that tDPN allows local control of deposition and deposition of materials typically immobile at room temperature.

AB - The nanoscale deposition of solid organic 'ink' was investigated using thermal dip pen nanolithography (tDPN). The deposition occurs only when the cantilver tip is heated above melting temperature of octadecylphosphonic acid (OPA) such that deposited structure does not spread significantly while cooling, which was revealed by postdeposition analysis. The single lines were found to be written with a width of 100 nm. The results show that tDPN allows local control of deposition and deposition of materials typically immobile at room temperature.

UR - http://www.scopus.com/inward/record.url?scp=4944244348&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=4944244348&partnerID=8YFLogxK

U2 - 10.1063/1.1785860

DO - 10.1063/1.1785860

M3 - Article

AN - SCOPUS:4944244348

VL - 85

SP - 1589

EP - 1591

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 9

ER -