Full-swing bootstrapped BiCMOS buffer

Elizabeth Brauer, Pradeep Elamanchili

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Bipolar circuits have high drive capability with low delay sensitivity to load while CMOS circuits have low power dissipation and high packing density. Combining both bipolar and MOS transistors on one monolithic substrate, Bipolar-CMOS (BiCMOS) circuits have high drive capability and low power dissipation at the expense of increased fabrication complexity. A major problem with conventional BiCMOS circuits is the reduced output swing due to the bipolar output transistors. This paper presents a novel BiCMOS circuit which uses bootstrapping to attain a full logic swing at the output. We present a design equation to estimate the size of the bootstrap capacitance as a function of power supply voltage. Simulations were performed using parameters from a 2.0 μm CMOS process with NPN option at supply voltages of 3.3 and 5 V. The circuit is a practical design which improves on the delay and power performance of previous bootstrapped BiCMOS inverters.

Original languageEnglish (US)
Title of host publicationProceedings of the IEEE Great Lakes Symposium on VLSI
Editors Anon
PublisherIEEE
Pages8-13
Number of pages6
StatePublished - 1997
Externally publishedYes
EventProceedings of the 1997 7th Great Lakes Symposium on VLSI - Urbana-Champaign, IL, USA
Duration: Mar 13 1997Mar 15 1997

Other

OtherProceedings of the 1997 7th Great Lakes Symposium on VLSI
CityUrbana-Champaign, IL, USA
Period3/13/973/15/97

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Brauer, E., & Elamanchili, P. (1997). Full-swing bootstrapped BiCMOS buffer. In Anon (Ed.), Proceedings of the IEEE Great Lakes Symposium on VLSI (pp. 8-13). IEEE.