The authors determine K x-ray production cross sections and K-shell fluorescence yields in solid Si and gaseous SiH4 as a function of incident-projectile charge state for a F beam at 1 and 2 MeV/amu. Discrepancies between solid- and gas-target results are observed in both the x-ray production cross section and fluorescence yield. It is found, however, that the ionization cross section (x-ray production cross section divided by fluorescence yield) is independent of target physical state for each incident-projectile charge state.
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics