Beam Damage of Self-Assembled Monolayers

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Abstract

The interfacial properties of CaF2 on Si(lll) under two different deposition conditions are studied using x-ray photoelectron spectroscopy (XPS). The CaF2/Si sample grown at a fixed temperature of 600 °C exhibits B-type epitaxy. For the second sample, the Si substrate was ramped from 100 to 600 °C in 5 min and then held at 600 °C until the end of the deposition. Under these conditions, the film exhibits A-type epitaxy, with very different electrical properties. The XPS analysis shows that for both samples, Si is bonded with both Ca and F at the interface. Significant differences are observed, however, for the chemical environment of Ca in the interfacial region for the two samples. In the first sample, Ca-Si bonding is relatively more pronounced, while in the second sample Ca-O bonding is observed to be predominant. In addition, for the sample grown under ramped temperature conditions, the fluorine dissociation is observed to be less and more F-Si bonds form at the interface. The results of this study help to explain the widely different electrical properties of the two films.

Original languageEnglish (US)
Pages (from-to)2298-2302
Number of pages5
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume11
Issue number4
DOIs
StatePublished - 1993

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Self assembled monolayers
Photoelectron spectroscopy
Epitaxial growth
Electric properties
damage
X rays
Fluorine
Temperature
epitaxy
Substrates
x ray spectroscopy
electrical properties
photoelectron spectroscopy
fluorine
dissociation
temperature

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

Beam Damage of Self-Assembled Monolayers. / Hong, Y.; Dillingham, Thomas R.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 11, No. 4, 1993, p. 2298-2302.

Research output: Contribution to journalArticle

@article{80466e0bb3454c6f87b5e2db6feeb52a,
title = "Beam Damage of Self-Assembled Monolayers",
abstract = "The interfacial properties of CaF2 on Si(lll) under two different deposition conditions are studied using x-ray photoelectron spectroscopy (XPS). The CaF2/Si sample grown at a fixed temperature of 600 °C exhibits B-type epitaxy. For the second sample, the Si substrate was ramped from 100 to 600 °C in 5 min and then held at 600 °C until the end of the deposition. Under these conditions, the film exhibits A-type epitaxy, with very different electrical properties. The XPS analysis shows that for both samples, Si is bonded with both Ca and F at the interface. Significant differences are observed, however, for the chemical environment of Ca in the interfacial region for the two samples. In the first sample, Ca-Si bonding is relatively more pronounced, while in the second sample Ca-O bonding is observed to be predominant. In addition, for the sample grown under ramped temperature conditions, the fluorine dissociation is observed to be less and more F-Si bonds form at the interface. The results of this study help to explain the widely different electrical properties of the two films.",
author = "Y. Hong and Dillingham, {Thomas R}",
year = "1993",
doi = "10.1116/1.578365",
language = "English (US)",
volume = "11",
pages = "2298--2302",
journal = "Journal of Vacuum Science and Technology A",
issn = "0734-2101",
publisher = "AVS Science and Technology Society",
number = "4",

}

TY - JOUR

T1 - Beam Damage of Self-Assembled Monolayers

AU - Hong, Y.

AU - Dillingham, Thomas R

PY - 1993

Y1 - 1993

N2 - The interfacial properties of CaF2 on Si(lll) under two different deposition conditions are studied using x-ray photoelectron spectroscopy (XPS). The CaF2/Si sample grown at a fixed temperature of 600 °C exhibits B-type epitaxy. For the second sample, the Si substrate was ramped from 100 to 600 °C in 5 min and then held at 600 °C until the end of the deposition. Under these conditions, the film exhibits A-type epitaxy, with very different electrical properties. The XPS analysis shows that for both samples, Si is bonded with both Ca and F at the interface. Significant differences are observed, however, for the chemical environment of Ca in the interfacial region for the two samples. In the first sample, Ca-Si bonding is relatively more pronounced, while in the second sample Ca-O bonding is observed to be predominant. In addition, for the sample grown under ramped temperature conditions, the fluorine dissociation is observed to be less and more F-Si bonds form at the interface. The results of this study help to explain the widely different electrical properties of the two films.

AB - The interfacial properties of CaF2 on Si(lll) under two different deposition conditions are studied using x-ray photoelectron spectroscopy (XPS). The CaF2/Si sample grown at a fixed temperature of 600 °C exhibits B-type epitaxy. For the second sample, the Si substrate was ramped from 100 to 600 °C in 5 min and then held at 600 °C until the end of the deposition. Under these conditions, the film exhibits A-type epitaxy, with very different electrical properties. The XPS analysis shows that for both samples, Si is bonded with both Ca and F at the interface. Significant differences are observed, however, for the chemical environment of Ca in the interfacial region for the two samples. In the first sample, Ca-Si bonding is relatively more pronounced, while in the second sample Ca-O bonding is observed to be predominant. In addition, for the sample grown under ramped temperature conditions, the fluorine dissociation is observed to be less and more F-Si bonds form at the interface. The results of this study help to explain the widely different electrical properties of the two films.

UR - http://www.scopus.com/inward/record.url?scp=21144474570&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=21144474570&partnerID=8YFLogxK

U2 - 10.1116/1.578365

DO - 10.1116/1.578365

M3 - Article

VL - 11

SP - 2298

EP - 2302

JO - Journal of Vacuum Science and Technology A

JF - Journal of Vacuum Science and Technology A

SN - 0734-2101

IS - 4

ER -