Beam Damage of Self-Assembled Monolayers

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Abstract

The interfacial properties of CaF2 on Si(lll) under two different deposition conditions are studied using x-ray photoelectron spectroscopy (XPS). The CaF2/Si sample grown at a fixed temperature of 600 °C exhibits B-type epitaxy. For the second sample, the Si substrate was ramped from 100 to 600 °C in 5 min and then held at 600 °C until the end of the deposition. Under these conditions, the film exhibits A-type epitaxy, with very different electrical properties. The XPS analysis shows that for both samples, Si is bonded with both Ca and F at the interface. Significant differences are observed, however, for the chemical environment of Ca in the interfacial region for the two samples. In the first sample, Ca-Si bonding is relatively more pronounced, while in the second sample Ca-O bonding is observed to be predominant. In addition, for the sample grown under ramped temperature conditions, the fluorine dissociation is observed to be less and more F-Si bonds form at the interface. The results of this study help to explain the widely different electrical properties of the two films.

Original languageEnglish (US)
Pages (from-to)2298-2302
Number of pages5
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume11
Issue number4
DOIs
StatePublished - Jul 1993

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ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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