Additive decomposition applied to the semiconductor drift-diffusion model

Elizabeth J. Brauer, Marek Turowski, James M. Mcdonough

Research output: Contribution to journalArticle

Abstract

A new numerical method for semiconductor device simulation is presented. The additive decomposition method has been successfully applied to Burgers' and Navier-Stokes equations governing turbulent fluid flow by decomposing the equations into large-scale and small-scale parts without averaging. The additive decomposition (AD) technique is well suited to problems with a large range of time and/or space scales, for example, thermal-electrical simulation of power semiconductor devices with large physical size. Furthermore, AD adds a level of parallelization for improved computational efficiency. The new numerical technique has been tested on the 1-D drift-diffusion model of a p-i-n diode for reverse and forward biases. Distributions of ø, n and p have been calculated using the AD method on a coarse large-scale grid and then in parallel small-scale grid sections. The AD results agreed well with the results obtained with a traditional one-grid approach, while potentially reducing memory requirements with the new method.

Original languageEnglish (US)
Pages (from-to)393-399
Number of pages7
JournalVLSI Design
Volume8
Issue number1-4
DOIs
StatePublished - Jan 1 1998

Keywords

  • Drift-diffusion, decomposition
  • Numerical methods
  • Semiconductor
  • Simulation

ASJC Scopus subject areas

  • Hardware and Architecture
  • Computer Graphics and Computer-Aided Design
  • Electrical and Electronic Engineering

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